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FeSe/STO films. S. Tan, D. L. Feng*, Nature 30 Sep 2020 4.2 Evidence for the crossover in FeSe. 4.2.1 Penetration depth. 4.2.2 ARPES.

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For 2D films, interface interactions can play a critical role in determining the prevailing physics of the system. In the case of 1ML FeSe on SrTiO3, interfacial electron-phonon (e-ph) coupling greatly increases its superconducting Tc over its bulk counterpart. We report high resolution angle-resolved photo-emission spectroscopy (ARPES) measurements of detwinned FeSe single crystals. The application of a mechanical strain is used to promote the volume 2019-10-02 · However, correlations strongly renormalize the bands compared to electronic structure calculations, and there is no evidence for the expected bulk band inversion. We present here a comprehensive angle resolved photoemission (ARPES) study of FeSeTe as function of photon energies ranging from 15 - 100 eV. 2017-05-05 · Thus the low temperature Fermi surface of FeSe as experimentally determined by ARPES consists of one elliptical hole pocket and one orthogonally-oriented peanut-shaped electron pocket. Our measurements clarify the long-standing controversies over the interpretation of ARPES measurements of FeSe.

The application of a mechanical strain is used to promote the volume 2019-10-02 · However, correlations strongly renormalize the bands compared to electronic structure calculations, and there is no evidence for the expected bulk band inversion.

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This indicates remarkable complexity and new physics in the “overdoped” region. Abstract: We report high resolution ARPES measurements of detwinned FeSe single crystals.

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2014-12-30 Here we present the influence of different STO surface terminations and photon energy dependent ARPES results which help to clarify the role of the substrate in the monolayer FeSe system.

The solid line indicates the cuts used during ARPES experiments. 2015-07-15 · ARPES studies on the monolayer FeSe exhibit a superconducting gap with a size of 15 meV, corresponding to a T c ∼ 55 K , . Based on a series of ARPES measurements to investigate the effect of film thickness on the electron structure, Tan et al.
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Although ARPES measurements indicated a the distinct pseudogap-like reduction in DOS in the hole pocket above \(T_{\text{c}}\), 116) no discernible reduction in DOS was observed in STS measurements.

a) Schematic diagram of the material structure.
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2021-02-17 High‐temperature superconductivity at the FeSe/SrTiO3 interface Yuan‐Yuan Xiang, Fa wang, DA Wang, Qiang‐Hua Wang, and Dong‐Hai Lee. Phys. Rev. B 86, 134508 (2012) Atomic and electronic structures of FeSe monolayer and bilayer thin films on SrTiO3(001): First‐principles study Kai … ARPES on Electronic Structure and Superconductivity of FeSe /SrTiO 3 Films Xingjiang ZHOU (周兴江) National Lab for Superconductivity Institute of Physics, Chinese Academy of Sciences, Beijing, China Strong Correlations and Unconventional Superconductivity: Towards a Conceptual Framework ， 2014/09/22--26, KITP, Santa Barbara spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) on fresh surfaces. FeSe PLD growth protocols were ﬁne-tuned by optimizing target-to-substrate distance d and ablation frequency, atomically ﬂat terraces with unit-cell step heights are obtained, overcoming the spiral morphology often observed by others. the low temperature Fermi surface of FeSe as experimentally determined by ARPES consists of one ellipti-cal hole pocket and one orthogonally-oriented peanut-shaped electron pocket.

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2019. In this Nature paper, T. Shimojima (RIKEN CEMS) et al. use time-resolved ARPES to visualize Experimental setup----OMBE+MBE+ARPES. 1. Heterostructure Design and in- situ ARPES study.

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A phase diagram Evidence for unidirectional nematic bond ordering in FeSe Termination- dependent electronic structure of LaFeAsO revealed by nano-ARPES. S Jung, M By combining the findings of the low temperature electronic structure from ARPES and quantum oscillations we have established for the fisrt time that FeSe We report angle-resolved photoemission spectroscopy (ARPES) study on atomic- layer FeSe films grown on SrTiO_3 substrate. We observed that a monolayer 23 Feb 2018 We present a systematic angle-resolved photoemission spectroscopy study of the superconducting gap in FeSe.

Surprisingly, the Tc of a single layer of FeSe film grown epitaxially on the SrTiO 3 substrate is enhanced to over 55K. We perform in-situ synchrotron-based MBE/ARPES experiment to understand how the transition temperature can be enhanced from the bulk superconducting transition temperature (Tc) of 8K at this 1UC FeSe/STO interface. Here, we report high resolution angle resolved photoemission spectroscopy (ARPES) results which reveal an unexpected and unique characteristic of the 1UC FeSe/STO system: each energy band of the FeSe film is almost exactly replicated at a fixed energy separation. Combining Angle resolved photoelectron spectroscopy (ARPES) and a μ-focused Laser, we have performed scanning ARPES microscopy measurements of the domain population within the nematic phase of FeSe single crystals. We are able to demonstrate a variation of the domain population density on a scale of a few 10 μmwhile constraining the upper limit of This is confirmed by performing ARPES on FeSe single crystals, whereby a 25-meV rigid chemical potential shift is detected across the entire Brillouin zone over the temperature range between 100 K and 300 K. The finding has important implications for any future theoretical models of nematicity and superconductivity in FeSe and related materials.